发明名称 STRUCTURE IN A HIGH VOLTAGE PATH OF AN ULTRA-HIGH VOLTAGE DEVICE FOR PROVIDING ESD PROTECTION
摘要 An ultra-high voltage device has a high voltage path established from a high voltage N-well through a first metal layer to a second metal layer, and a contact plug electrically connected between the high voltage N-well and the first metal layer. The contact plug has a distributed structure on a horizontal layout to improve the uniformity of the ultra-high voltage device such that the current in the high voltage path will be more uniform distributed so as to avoid the localized heat concentration caused by non-uniform current distribution that would damage the ultra-high voltage device. Multiple fuse apparatus are preferably connected to the first metal layer individually. Each the fuse apparatus includes a poly fuse to be burnt down when an over-load current flows therethrough.
申请公布号 US2011260287(A1) 申请公布日期 2011.10.27
申请号 US201113091264 申请日期 2011.04.21
申请人 RICHTEK TECHNOLOGY CORP. 发明人 LEE JIAN-HSING
分类号 H01L23/525 主分类号 H01L23/525
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