发明名称 |
Process for Eliminating Delamination between Amorphous Silicon Layers |
摘要 |
One embodiment is a method of forming a circuit structure. The method comprises forming a first amorphous layer over a substrate; forming a first glue layer over and adjoining the first amorphous layer; forming a second amorphous layer over and adjoining the first glue layer; and forming a plurality of posts separated from each other by removing a first portion of the first amorphous layer and a first portion of the second amorphous layer. At least some of the plurality of posts each comprises a second portion of the first amorphous layer, a first portion of the first glue layer, and a second portion of the second amorphous layer.
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申请公布号 |
US2011263106(A1) |
申请公布日期 |
2011.10.27 |
申请号 |
US201113176548 |
申请日期 |
2011.07.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE JIOU-KANG;CHENG CHUN-REN "SEAN";TSAI SHANG-YING;WU TING-HAU;CHEN HSIANG-FU "BENIOR" |
分类号 |
H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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