| 摘要 |
Operating characteristics, such as the on state resistance, the reverse leakage current, and the reverse breakdown voltage, are improved with a Schottky diode (200, 300, 400, and 500) that has spaced-apart doped strips (214, 216) in a semiconductor material (210, 516), a cathode region of the semiconductor material (210, 516) that lies between the doped strips (214, 216), and an anode metal region (244) that touches the surface of the cathode region of the semiconductor material (210, 516). The Schottky diode (200, 300, 400, and 500) also has spaced-apart non- conductive strips (224, 226, 410, 412) that touch the surface of the cathode region of the semiconductor material (210, 516) and laterally space the metal region (244) away from the spaced-apart doped strips (214, 216). |
