COMPOSITION FOR FORMATION OF LITHOGRAPHIC RESIST UNDERLAYER FILM WHICH CONTAINS RESIN CONTAINING POLYIMIDE STRUCTURE
摘要
<p>Disclosed is a resist underlayer film formation composition for forming a resist underlayer film having heat resistance and also having hard mask properties. Specifically disclosed are: a resist underlayer film formation composition which contains a polymer comprising a unit structure represented by formula (1) (wherein R1 represents a tetravalent organic group having a fluorene structure; and R2 represents a bivalent organic group which may have a fluorene structure), a unit structure represented by formula (2) (wherein R1 represents a tetravalent organic group having a fluorene structure; and R2 represents a bivalent organic group which may have a fluorene structure), or a combination of the unit structures; and a resist underlayer film formation composition as mentioned above, wherein R2 represents a bivalent organic group having a fluorene structure.</p>
申请公布号
WO2011132641(A1)
申请公布日期
2011.10.27
申请号
WO2011JP59546
申请日期
2011.04.18
申请人
NISSAN CHEMICAL INDUSTRIES, LTD.;OKUYAMA, HIROAKI;HASHIMOTO, KEISUKE;KATO, MASAKAZU;SHINJO, TETSUYA