| 摘要 |
<p>The disclosed method for producing a semiconductor device is characterized by being provided with a step for forming a mask (31) by applying a masking ink (24) to a semiconductor substrate (10), and a step for forming diffusion layers (12, 13), and by containing at least one step of: a step for heating the masking ink (24) at at least one timing of before, during, or after the application of the masking ink (24); and a step for photoirradiating the masking ink (24).</p> |
