GLASS SUBSTRATE FOR FORMING SEMICONDUCTOR DEVICE VIA

摘要

Provided is a glass substrate for forming a semiconductor device via in which the incidence of alpha rays is significantly restricted, and which can be processed by laser and has a high affinity for silicon members. The glass substrate for forming a semiconductor device via: has a plurality of through holes; has an alpha count that is not more than 0.05 counts/cm2/hour; contains at least 40 wt% SiO2; and the total content of Li2O(wt%), Na2O (wt%) and K2O (wt%) is not more than 6.0 wt%; and has an average coefficient of thermal expansion that is within the range of 20 × 10-7/K to 40 × 10-7/K at 50°C to 350°C.