SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To reduce a leakage current in a floating diffusion region and variations in the amount of leakage current between pixels in a CMOS solid-state imaging device.SOLUTION: The solid-state imaging device has: a first semiconductor region 23 of a first conductivity type; a photoelectric conversion unit PD having a second semiconductor region 25 of a second conductivity type that is formed in a region isolated by an element isolation region 28 in the first semiconductor region; and pixel transistors (Tr1 to Tr4) formed in the first semiconductor region. The solid-state imaging device has a floating diffusion region FD of the second conductivity type formed in a region isolated by the element isolation region 28 in the first semiconductor region. Further, the solid-state imaging device has an electrode 53 which is formed on the first semiconductor region 23 existing between the floating diffusion region FD and the element isolation region 28, and to which a necessary bias voltage is applied.