发明名称 |
METAL DEPOSITION METHOD, AND LASER METAL DEPOSITION APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To perform the metal deposition so that the crystal orientation of a deposition portion is in the same direction as a parent material, in a deposition method in which a buildup is formed on a single crystal or directionally solidified crystal parent material.SOLUTION: In the deposition method of forming a buildup on a single crystal or directionally solidified crystal parent material, metal deposition is performed from an extension in a preferential growth orientation of parent material crystals while forcibly cooling a portion of the parent material somewhat below a processed surface and beforehand imparting a temperature gradient to the parent material so that a maximum temperature gradient is oriented along the preferential growth orientation of the parent material crystals. |
申请公布号 |
JP2011212730(A) |
申请公布日期 |
2011.10.27 |
申请号 |
JP20100084769 |
申请日期 |
2010.04.01 |
申请人 |
HITACHI LTD |
发明人 |
KAWANAKA KEIJI;TSUKAMOTO TAKESHI;MIYAGI MASANORI |
分类号 |
B23K31/00;B23K26/04;B23K26/14;B23K26/34 |
主分类号 |
B23K31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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