发明名称 METAL DEPOSITION METHOD, AND LASER METAL DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To perform the metal deposition so that the crystal orientation of a deposition portion is in the same direction as a parent material, in a deposition method in which a buildup is formed on a single crystal or directionally solidified crystal parent material.SOLUTION: In the deposition method of forming a buildup on a single crystal or directionally solidified crystal parent material, metal deposition is performed from an extension in a preferential growth orientation of parent material crystals while forcibly cooling a portion of the parent material somewhat below a processed surface and beforehand imparting a temperature gradient to the parent material so that a maximum temperature gradient is oriented along the preferential growth orientation of the parent material crystals.
申请公布号 JP2011212730(A) 申请公布日期 2011.10.27
申请号 JP20100084769 申请日期 2010.04.01
申请人 HITACHI LTD 发明人 KAWANAKA KEIJI;TSUKAMOTO TAKESHI;MIYAGI MASANORI
分类号 B23K31/00;B23K26/04;B23K26/14;B23K26/34 主分类号 B23K31/00
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