| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor which has a flat film surface irrespective of the degree of roughness of the surface of a substrate, has the high reliability, and which reduces a production cost, and to provide a method for manufacturing the transistor.SOLUTION: A method is for manufacturing a bottom gate type thin-film transistor 1, in which a gate electrode 11, a gate insulating layer 12, a semiconductor active layer 13, a source electrode 14, and a drain electrode 15 are successively formed on an insulating substrate 10. In the gate insulating layer 12, a lower layer 12a and an upper layer 12b of at least one layer or more laminated on the lower layer 12a are formed on the insulating substrate 10 in this order, and the lower layer 12a is formed by the vacuum ultraviolet light CVD method. |
