| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor in which a gate electrode and a source drain electrode are formed with high alignment precision and the source-drain electrode is patterned with high precision without performing a lift-off step.SOLUTION: On a translucent substrate, a light-shielding gate electrode, a translucent insulating layer, an oxide semiconductor layer and a translucent conductive layer are formed in order. Then, a reversal type resist film or negative type resist film is provided on the conductive layer, and image reversal processing is performed when the reversal type resist film is provided after exposure is performed from the substrate side, or the exposure is performed from the substrate side when the negative type resist film is provided. Then, the resist film is developed to form a resist pattern, having an opening at a position corresponding to the gate electrode, on the conductive layer. The conductive layer is etched through the opening of the resist pattern to divide the conductive layer, thereby forming a source electrode and a drain electrode. |
