| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device suppressing degradation of electric characteristics of a transistor due to electric field concentration onto an upper corner part of an element separation groove formed in a semiconductor substrate.SOLUTION: The method includes a step of forming the element separation groove 2 having a crystal orientation different from that of a surface of the semiconductor substrate 1 in the semiconductor substrate 1, a step of depositing a metal 3 accelerating generation of an oxygen radical or a film containing the metal 3 on the semiconductor substrate 1, a step of oxidizing the semiconductor substrate 1, and a step of removing the metal or the metal-containing film. |
