SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory device with improved operational characteristics and reliability.SOLUTION: The semiconductor memory device includes a memory cell array 1 having a plurality of first memory cell units and second memory cell units each having a plurality of memory cells, plural sets of first wirings, and plural sets of second wirings; a first sense amplifier circuit 462 connected to the plural sets of first wirings; and a second sense amplifier circuit 461 connected to the plural sets of second wirings. Each of the plural sets of first and second wirings is formed with metal embedded therein. All of the first and second wirings have the same height up to the upper surfaces. The plural sets of first and second wirings adjacently formed to each other are repeatedly constituted as a plurality of pairs. At least either of width and thickness in the plural sets of second wirings is smaller than that in the plural sets of first wirings. The first sense amplifier circuit is disposed to face the second sense amplifier circuit with the memory cell array sandwiched therein.