发明名称 MR enhancing layer (MREL) for spintronic devices
摘要 The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the active layers (such as API, SIL, FGL, and Free layers). An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi.
申请公布号 US2011260270(A1) 申请公布日期 2011.10.27
申请号 US20100799468 申请日期 2010.04.26
申请人 HEADWAY TECHNOLOGIES INC. 发明人 ZHANG KUNLIANG;LI MIN;ZHOU YUCHEN
分类号 H01L43/00;H01L29/82;H01L43/12 主分类号 H01L43/00
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