发明名称 |
MR enhancing layer (MREL) for spintronic devices |
摘要 |
The performance of an MR device has been improved by inserting one or more Magneto-Resistance Enhancing Layers (MRELs) into approximately the center of one or more of the active layers (such as API, SIL, FGL, and Free layers). An MREL is a layer of a low band gap, high electron mobility semiconductor such as ZnO or a semimetal such as Bi.
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申请公布号 |
US2011260270(A1) |
申请公布日期 |
2011.10.27 |
申请号 |
US20100799468 |
申请日期 |
2010.04.26 |
申请人 |
HEADWAY TECHNOLOGIES INC. |
发明人 |
ZHANG KUNLIANG;LI MIN;ZHOU YUCHEN |
分类号 |
H01L43/00;H01L29/82;H01L43/12 |
主分类号 |
H01L43/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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