| 发明名称 |
MAGNETIC MEMORY DEVICE AND MAGNETIC RANDOM ACCESS MEMORY |
| 摘要 |
A magnetic memory cell is provided with a magnetization record layer and a magnetic tunnel junction section. The magnetization record layer is a ferromagnetic layer having a perpendicular magnetic anisotropy. The magnetic tunnel junction section is used to read data from the magnetization record layer. The magnetization record layer has a plurality of domain wall motion regions.
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| 申请公布号 |
US2011260273(A1) |
申请公布日期 |
2011.10.27 |
| 申请号 |
US200913139604 |
申请日期 |
2009.12.24 |
| 申请人 |
FUKAMI SHUNSUKE;NAGAHARA KIYOKAZU;SUZUKI TETSUHIRO;ISHIWATA NOBUYUKI;OHSHIMA NORIKAZU |
发明人 |
FUKAMI SHUNSUKE;NAGAHARA KIYOKAZU;SUZUKI TETSUHIRO;ISHIWATA NOBUYUKI;OHSHIMA NORIKAZU |
| 分类号 |
H01L29/82 |
主分类号 |
H01L29/82 |
| 代理机构 |
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