发明名称 |
VERTICAL MEMORY DEVICES WITH QUANTUM-DOT CHARGE STORAGE CELLS |
摘要 |
A memory device includes a substrate, a semiconductor column extending perpendicularly from the substrate and a plurality of spaced-apart charge storage cells disposed along a sidewall of the semiconductor column. Each of the storage cells includes a tunneling insulating layer disposed on the sidewall of the semiconductor column, a polymer layer disposed on the tunneling insulating layer, a plurality of quantum dots disposed on or in the polymer layer and a blocking insulating layer disposed on the polymer layer.
|
申请公布号 |
US2011260237(A1) |
申请公布日期 |
2011.10.27 |
申请号 |
US201113042051 |
申请日期 |
2011.03.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JAE-GOO;CHOI JUNG-DAL;PARK YOUNG-WOO |
分类号 |
H01L29/792;H01L29/78 |
主分类号 |
H01L29/792 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|