SEMICONDUCTOR PHOTODETECTOR AND RADIATION DETECTOR SYSTEM

摘要

The invention relates to a semiconductor photodetector, comprising: a semiconductor substrate (1), an upper doping zone (3), a lower doping zone (4). A first additional doping zone (11) and a second additional doping zone (12) are provided below avalanche areas (6), said zones being doped according to different doping types. The first additional doping zone (11) deplets preferably never on carriers and can be used as a subgate-electrode. The second additional doping zone (12) is used for forming a potential barrier between the upper doping zone (3) and the first additional doping zone (11). The snubber resistance of the snubber resistor area can be adjusted independently and individually, a corresponding control potential being applied to the first additional doping zone (11).