WIRE BONDING METHOD FOR POWER SEMICONDUCTOR DEVICE

摘要

Disclosed is a wire bonding method for a power semiconductor device, wherein when bonding one end (1a) of a wire (1) to an electrode part (Sa), a workpiece (WK) comprising a power semiconductor element (S) is fixed on a support (3) by a specified fixing pressure (F), and ultrasonic vibration is applied while the end (1a) of the wire (1) is pressed against the electrode part (Sa) with a specified pressing force (P) by a wedge tool (T) with an inverted V-shape wire pressing surface (Tf) in cross-section. A bond length (L) and a bond width (W) of a bond surface (J) of the wire end (1a) and the electrode part (Sa) are set such that the ratio (L/W) is within the range 1.0-1.6.