SILICON PHOTOELECTRIC MULTIPLIER

摘要

A cell for a silicon-based photoelectric multiplier comprises a first layer (2; 34) of a first conductivity type, a second layer (3; 35) of a second conductivity type formed on the first layer (2; 34), wherein the first layer (2; 34) and the second layer (3; 35) form a first p-n junction, wherein the cell is further processed by an ion implantation step wherein the parameters of the ion implantation are selected such that due to an implantation-induced damage of the crystal lattice an absorption length of infrared light of a wavelength in the range of -800 nm to 1000 nm is decreased.