发明名称 METHOD FOR FORMING RESIST PATTERN AND METHOD FOR MANUFACTURING MOLD
摘要 PROBLEM TO BE SOLVED: To suppress a substantial increase in necessary exposure intensity while ensuring a high resolution for a resist layer having a predetermined composition.SOLUTION: A method for forming a resist pattern includes steps of: forming a resist layer containing a polymer of α-chloromethacrylate and α-methylstyrene on a substrate; performing rendering or exposure of a predetermined pattern by irradiating the resist layer with an energy beam; and developing the rendered or exposed resist layer with a developer containing n-amyl acetate at ≤5°C.
申请公布号 JP2011215242(A) 申请公布日期 2011.10.27
申请号 JP20100081393 申请日期 2010.03.31
申请人 HOYA CORP 发明人 IYAMA HIROMASA;KOBAYASHI HIDEO
分类号 G03F7/32;G03F7/039;H01L21/027 主分类号 G03F7/32
代理机构 代理人
主权项
地址