发明名称 |
METHOD FOR FORMING RESIST PATTERN AND METHOD FOR MANUFACTURING MOLD |
摘要 |
PROBLEM TO BE SOLVED: To suppress a substantial increase in necessary exposure intensity while ensuring a high resolution for a resist layer having a predetermined composition.SOLUTION: A method for forming a resist pattern includes steps of: forming a resist layer containing a polymer of α-chloromethacrylate and α-methylstyrene on a substrate; performing rendering or exposure of a predetermined pattern by irradiating the resist layer with an energy beam; and developing the rendered or exposed resist layer with a developer containing n-amyl acetate at ≤5°C. |
申请公布号 |
JP2011215242(A) |
申请公布日期 |
2011.10.27 |
申请号 |
JP20100081393 |
申请日期 |
2010.03.31 |
申请人 |
HOYA CORP |
发明人 |
IYAMA HIROMASA;KOBAYASHI HIDEO |
分类号 |
G03F7/32;G03F7/039;H01L21/027 |
主分类号 |
G03F7/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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