发明名称 Power switch component having improved temperature distribution
摘要 A power switch component having a semiconductor switch and a contacting applied to a contact zone of the semiconductor switch is introduced. The contact zone has a semiconductor layer and a metal plating applied to the semiconductor layer. The semiconductor layer has at least one conducting region and at least one non-conducting region situated directly under the metal plating.
申请公布号 US2011260341(A1) 申请公布日期 2011.10.27
申请号 US201113025344 申请日期 2011.02.11
申请人 JACKE THOMAS;FOERSTER CHRISTIAN;HOEHR TIMM;HEINISCH HOLGER;PLUNTKE CHRISTIAN;JOOS JOACHIM 发明人 JACKE THOMAS;FOERSTER CHRISTIAN;HOEHR TIMM;HEINISCH HOLGER;PLUNTKE CHRISTIAN;JOOS JOACHIM
分类号 H01L23/49 主分类号 H01L23/49
代理机构 代理人
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