| 摘要 |
<p>Disclosed is a magnetron sputtering apparatus which comprises: a deposition chamber (1); a processing chamber (7) which is in communication with the deposition chamber (1) and a target area (8), which is composed of targets (23) and located at the place where the processing chamber (7) connects the deposition chamber (1); a transport chamber (9) set adjacent to the processing chamber (7), and a first gas-tight gate (10) positioned on the wall of the transport chamber (9) which is opened or closed to control the vacuum degree in the transport chamber (9) and to replace the target (23); a transport device (11), which is set in the processing chamber (7) and/or the transport chamber (9), transports the target (23) between the transport chamber (9) and the processing chamber (7) via a second gas-tight gate (12) on the adjacent walls of the transport chamber (9) and the processing chamber (7) for replacement when the transport chamber (9) is in a set vacuum degree state.</p> |
