摘要 |
<p>Non-voltage storage and techniques for fabricating non-volatile storage are disclosed. In some embodiments, at least a portion of the control gates of non-volatile storage elements are formed from p-type polysilicon. In one embodiment, a lower portion of the control gate is p-type polysilicon. The upper portion of the control gate could be p-type polysilicon, n-type polysilicon, metal, metal nitride, etc. P-type polysilicon in the control gate may not deplete even at high Vpgm. Therefore, a number of problems that could occur if the control gate depleted are mitigated. For example, a memory cell having a control gate that is at least partially p-type polysilicon might be programmed with a lower Vpgm than a memory cell formed from n-type polysilicon.</p> |
申请人 |
SANDISK CORPORATION;ORIMOTO, TAKASHI WHITNEY;SUYAMA, ATSUSHI;TIAN, MING;CHIN, HENRY;CHIEN, HENRY;PURAYATH, VINOD ROBERT;LEE, DANA |
发明人 |
ORIMOTO, TAKASHI WHITNEY;SUYAMA, ATSUSHI;TIAN, MING;CHIN, HENRY;CHIEN, HENRY;PURAYATH, VINOD ROBERT;LEE, DANA |