SEMICONDUCTOR ELEMENT, METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT, ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE

摘要

The disclosed semiconductor element is provided with: an oxide semiconductor film wherein a channel section has been formed; and a gate section disposed facing the channel section. Also, the oxide semiconductor film is formed with: a drain section at which the oxide semiconductor film has been subjected to a resistance-lowering treatment; and a intermediate region that is provided between the channel section and the drain section and that has not been subjected to the resistance-lowering treatment. The oxide semiconductor film is provided in at least one section with a conductive film that shields the intermediate region from the resistance-lowering treatment.