| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive group III nitride semiconductor light emitting element.SOLUTION: The light emitting element 100 has a p-electrode 103, a p-type layer 104, an active layer 105, and an n-type layer 106 on a ceramic substrate 101. A first trench 108 is formed on a surface of the p-type layer 104 facing the p-electrode 103 with a depth reaching the n-type layer 106. An auxiliary electrode 109 is formed in contact with a bottom face of the first trench 108 but out of contact with a side face of the first trench 108. A second trench 111 is formed on a surface of the n-type layer 106 in a region opposing a part of the auxiliary electrode 109 with a depth reaching the auxiliary electrode 109, and an n-pad electrode 107 is formed on the auxiliary electrode 109 exposed on a bottom face of the second trench 111. Furthermore, a third trench 115 is formed on the surface of the n-type layer 106 in a region not opposing the auxiliary electrode 109 with a depth reaching the p-electrode 103, and a p-pad electrode 114 is formed on the p-electrode 103 exposed on a bottom face of the third trench 115. |
