发明名称 SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF CLEANING PROCESSING VESSEL
摘要 When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel.
申请公布号 US2011259370(A1) 申请公布日期 2011.10.27
申请号 US201113089988 申请日期 2011.04.19
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 KAMEDA KENJI;SONOBE JUN;TADAKI YUDAI
分类号 B08B5/00 主分类号 B08B5/00
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