| 摘要 |
Disclosed herein are a semiconductor device and a method for manufacturing the same. The method includes forming a gate structure using a carbon nano tube (CNT). In order to prevent reduction of the gate resistance and the short channel effect, a CNT gate having a grown CNT pattern with a half-cylinder shape is formed over a recess of a semiconductor substrate. The CNT gate has the same effect as a recess gate, and can prevent the short channel effect, improve the speed, and the lower power characteristic of semiconductor devices.
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