<p>A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the fist vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.</p>
申请公布号
KR20110117515(A)
申请公布日期
2011.10.27
申请号
KR20100037017
申请日期
2010.04.21
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LEE, JANG EUN;OH, SE CHUNG;LEE, JEA HYOUNG;KIM, WOO JIN;JEONG, JUN HO;LIM, WOO CHANG