NONVOLATILE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a variable resistance layer that is composed of a metal oxide layer containing Hf suitable for a resistance changing operation in a resistance change type nonvolatile memory element.SOLUTION: The nonvolatile memory element has a first electrode, a second electrode, and a variable resistance layer that is interposed between the first electrode and the second electrode so as to have resistance values changing between at least two different resistance states. The variable resistance layer includes a metal oxide layer containing at least Hf and O and has a composition expressed by a Hf and O molar ratio (O/Hf ratio) ranging from 0.30 to 1.90.