发明名称 |
AMORPHOUS SILICON FILM FORMATION METHOD AND AMORPHOUS SILICON FILM FORMATION APPARATUS |
摘要 |
The amorphous silicon film formation method includes forming a seed layer on the surface of a base by heating the base and flowing aminosilane-based gas onto the heated base; and forming an amorphous silicon film on the seed layer by heating the base, supplying silane-based gas containing no amino group onto the seed layer on the surface of the heated base, and thermally decomposing the silane-based gas containing no amino group.
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申请公布号 |
US2011263105(A1) |
申请公布日期 |
2011.10.27 |
申请号 |
US201113094043 |
申请日期 |
2011.04.26 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HASEBE KAZUHIDE;MURAKAMI HIROKI;KAKIMOTO AKINOBU |
分类号 |
H01L21/205;B82Y40/00;C23C16/24;C23C16/455;C23C16/46;C23C16/52 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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