发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
Disclosed is a semiconductor device using an oxide semiconductor, with stable electric characteristics and high reliability. In a process for manufacturing a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation is performed by heat treatment and oxygen doping treatment is performed. The transistor including a gate insulating film subjected to the oxygen doping treatment and the oxide semiconductor film subjected to the dehydration or dehydrogenation by the heat treatment is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress (BT) test can be reduced. |
申请公布号 |
WO2011132625(A1) |
申请公布日期 |
2011.10.27 |
申请号 |
WO2011JP59472 |
申请日期 |
2011.04.12 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;YAMAZAKI, SHUNPEI |
发明人 |
YAMAZAKI, SHUNPEI |
分类号 |
H01L21/336;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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