Amorphous oxide and field effect transistor

摘要

AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR Abstract A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals and whose composition s- changes in a layer thickness direction and having an electron carrier concentration of 10 2 /cm 3 or more and less than 1018/cm3 and a field effect transistor comprising an active layer of an amorphous oxide whose composition changes in a layer thickness direction.