发明名称 INDIUM OR INDIUM-CONTAINING ALLOY WITH REDUCED QUANTITY OF α RAY
摘要 PROBLEM TO BE SOLVED: To make clear the phenomenon of the generation of α rays in indium and an indium-containing alloy and further to provide high purity indium with reduced quantity of α rays which can be adapted to a required material since, in the recent semiconductor device, density and volume are increased, the risk of occurrence of soft errors has been increased by the influence of α rays from a material in the vicinity of a semiconductor chip, and particularly, the request for the increase of purity to a solder material or indium used closely to the semiconductor device is strong, and further, the material with reduced α rays is required.SOLUTION: The indium is characterized in that the quantity of α rays in a sample after being subjected to melting and casting is ≤0.002 cph/cm.
申请公布号 JP2011214061(A) 申请公布日期 2011.10.27
申请号 JP20100083078 申请日期 2010.03.31
申请人 JX NIPPON MINING & METALS CORP 发明人 KANO MANABU
分类号 C22B58/00;B22D1/00;B23K35/26;C22B9/02;C22B9/04;C22C13/00;C22C28/00;H01L21/60 主分类号 C22B58/00
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