发明名称 LEAVING SUBSTITUENT-CONTAINING COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL, FILM THEREOF, AND ORGANIC TRANSISTOR USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a new leaving substituent-containing compound which is easily synthesized, has high solubility to an organic solvent, and can leave its substituent highly efficiently by application of external energy; an organic semiconductor material containing a compound highly efficiently obtained by adding external stimulation of heat or the like to the compound without forming a chemically unstable terminal olefin group; and an organic electronic device (especially an organic thin film transistor) using a film obtained by that the leaving substituent-containing compound is used as an organic semiconductor precursor and is made to form the film to be converted into an organic semiconductor by heat or the like.SOLUTION: The leaving substituent-containing compound includes a partial structure represented by formula (I). In the formula, at least one pair of (X, X) and (Y, Y) each denotes a hydrogen atom, and the other pair each denotes a group selected from the group consisting of a halogen atom and a substituted or unsubstituted 1C or more acyloxy group. In addition, a pair of the acyloxy groups of (X, X) or (Y, Y) may be identical or different, or may be bonded together to form a ring. Rto Reach denotes a hydrogen atom or a substituent. Q, Qeach denotes a hydrogen atom, a halogen atom or a monovalent organic group, and may be bonded together to form a ring.
申请公布号 JP2011213705(A) 申请公布日期 2011.10.27
申请号 JP20100163865 申请日期 2010.07.21
申请人 RICOH CO LTD 发明人 GOTO DAISUKE;YAMAMOTO SATOSHI;KOSAKA TOSHIYA;KATO TAKUJI;OKADA TAKASHI;SHINODA MASAHITO;MATSUMOTO SHINJI;MORI MASATAKA;YUTANI KEIICHIRO
分类号 C07C15/24;C07C25/22;C07D495/04;H01L29/786;H01L51/05;H01L51/30;H01L51/40 主分类号 C07C15/24
代理机构 代理人
主权项
地址