| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device suppressing contraction-cracking of a run over bonding material, when pressure-bonding a semiconductor element and a substrate with the bonding material containing metal particles, and excellent in heat cycle resistance characteristic.SOLUTION: The method of manufacturing the semiconductor device 5 using the bonding jig 4 having an opening into which the semiconductor element 1 can be loosely inserted, and a bonding material relief part formed on an opening edge of the opening and having an opening sectional area larger than the opening sectional area of the opening includes the step of interposing the metal-particle-containing bonding material 3 between the substrate 2 and the semiconductor element 1, the step of disposing the bonding jig 4 that the semiconductor element 1 is loosely inserted into the opening, and the step of pressing between the semiconductor element 1 and the substrate 2 by using the bonding jig 4 under a temperature environment of at least 200°C and not more than 500°C. |
