| 摘要 |
PROBLEM TO BE SOLVED: To improve uniformity of a film thickness when a thin film is formed.SOLUTION: A substrate treatment apparatus includes a reaction pipe 6, a rotating mechanism 20 configured to rotate a substrate in the reaction pipe 6, a gas supply system configured to supply a treatment gas to the reaction pipe 6, an exhaust system configured to exhaust an atmosphere in the reaction pipe 6, and a control unit 60. The gas supply system includes a gas supply piping 51 and a valve 2 configured to open and close the gas supply piping 51; and the exhaust system includes an exhaust pipe 40 and an exhaust valve configured to open and close the exhaust pipe 40. The control unit 60 closes the exhaust valve and opens the valve 2 to supply the treatment gas from the gas supply pipe 51 to the reaction pipe 6 in a state where the inside of the reaction pipe 6 is not exhausted. When the treatment gas is periodically supplied to the reaction pipe 6, the control unit 60 controls supply cycles of the gas supply system and rotation cycles of the rotating mechanism 20, a peripheral edge place of the substrate when the treatment gas is supplied to the substrate early and a peripheral edge place of the substrate when the treatment gas is supplied next being different from each other. |
