发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE ASSEMBLY |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in magnetic shielding effect of blocking off an external magnetic field.SOLUTION: The semiconductor device includes: an interlayer insulating film III1 so formed as to cover a switching element TR formed over a main surface of a semiconductor substrate SUB; flat plate-like lead wiring LEL; coupling wiring ICL coupling the lead wiring LEL and the switching element TR with each other; and a magnetoresistive element TMR including a magnetization free layer MFL the orientation of magnetization of which is variable and which is formed over the lead wiring LEL. The semiconductor device has wiring DL and another wiring BL, through which the magnetization state of the magnetization free layer MFL can be varied. In a memory cell area where multiple magnetoresistive elements TMR are arranged, a first high permeability film CLAD2 arranged above the magnetoresistive elements TMR is extended from the memory cell area up to a peripheral area that is an area other than the memory cell area. |
申请公布号 |
JP2011216622(A) |
申请公布日期 |
2011.10.27 |
申请号 |
JP20100082465 |
申请日期 |
2010.03.31 |
申请人 |
RENESAS ELECTRONICS CORP |
发明人 |
TSUJIUCHI MIKIO;TARUYA MASAYOSHI;TAKEUCHI YOSUKE |
分类号 |
H01L21/8246;C23C16/06;H01L21/3205;H01L21/822;H01L23/52;H01L27/04;H01L27/105;H01L43/08 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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