Rectifier bridge circuit for use in three-phase alternating current generator of motor car, has rectifying elements formed as trench metal-oxide-semiconductor barrier Schottky diodes with low reverse voltage drift

摘要

The circuit has rectifying elements formed as trench metal-oxide-semiconductor (MOS) barrier Schottky (TMBS) diodes (S1-S6) with low reverse voltage drift. The diodes are operated with high current during voltage breakdown. The low reverse voltage drift is influenced by one of depth of trenches, space between the trenches, width of the trenches, thickness of an oxide layer and doping of an epitaxial layer. The oxide layer is formed between the trenches, and a metal film is arranged at a front side.