发明名称 SOLDER JOINT METHOD, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a solder joint method that improves joint reliability of solder joining using SnBi-based solder, and to provide a semiconductor device using the joint method, and a method of manufacturing the semiconductor device.SOLUTION: In the method of joining a first conductive member 11 and a second conductive member 14 using solder containing Sn and Bi, at least one of the first conductive member 11 and second conductive member 14 is formed with an alloy of X which is at least one metal element selected from the first metal element group consisting of Cu, Ni and Sn, and Y which is at least one metal element selected from the second metal element group consisting of Ag, Au, Mg, Rh, Zn, Sb, Co, Li, and Al, and the first conductive member 11 and second conductive member 14 are positioned with the solder interposed and heat-treated. Bi in the solder is diffused in the X-Y alloy to prevent Bi segregation.
申请公布号 JP2011216813(A) 申请公布日期 2011.10.27
申请号 JP20100085937 申请日期 2010.04.02
申请人 FUJITSU LTD 发明人 OKAMOTO KEISHIRO
分类号 H01L21/60;B23K1/00;B23K35/26;B23K101/42;C22C9/00;C22C9/01;C22C9/02;C22C9/04;C22C9/06;C22C12/00 主分类号 H01L21/60
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