| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing liquid with a high polishing speed of a layer containing a silicon material other than polysilicon and capable of selectively suppressing polishing of a layer containing polysilicon in chemical mechanical polishing of a body to be polished having a layer containing polysilicon or modified polysilicon.SOLUTION: The polishing liquid contains components represented by (A)-(C), has pH of 1.5-7.0, and is capable of selectively polishing a second layer with respect to a first layer. Component (A) is colloidal silica particles having a negative ζ potential, component (B) is a phosphoric acid or an organic phosphonate compound represented by Formula (1): R-C(R)-(POH)or Formula (2): R-N(R)m-(CH-POH)n, and component (C) is an anionic surfactant having at least one of groups represented by Formula (I)-POX, Formula (II): -OPOX, and Formula (III): -COOX. In the Formula (1), Rand Rare each independently a hydrogen atom, a hydroxyl group, or a substituted or non-substituted alkyl group with a carbon number of 1-6. In the Formula (2), Ris a substituted or non-substituted alkyl group with a carbon number of 1-6, A is an alkyl group which is a single bonded or an alkyl group which is single bonded or which has the carbon number of 1-4, Ris a substituted or non-substituted alkyl group with a carbon number of 1-6, m is 0 or 1, and n is 1 or 2. In the Formulae (I)-(III), X is independently the hydrogen atom, lithium, sodium, potassium, or quaternary ammonium cation. |
