| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly integrated CMOS type SRAM which is a semiconductor device having two inverters and two select transistors arrayed in a matrix on a substrate.SOLUTION: The SRAM is constituted using an inverter including: a first pillar formed by integrating a first first-conductivity-type semiconductor 137, a first second-conductivity-type semiconductor 104 differing in polarity from the first first-conductivity-type semiconductor, and a first insulator 112 disposed between the first first-conductivity-type semiconductor 137 and second first-conductivity-type semiconductor 104, and extending at right angles to the substrate; a first second-conductivity-type high-concentration semiconductor 182 and a second second-conductivity-type high-concentration semiconductor 141 disposed over and under the first first-conductivity-type high-concentration semiconductor 137; a first first-conductivity-type high-concentration semiconductor 186 and a second first-conductivity-type high-concentration semiconductor 143 disposed over and under the first second-conductivity-type semiconductor 104; a first gate insulator 176 surrounding the first pillar; and a first gate conductor 167. |
