| 摘要 |
According to one embodiment, a power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type, a fourth semiconductor layer, a fifth semiconductor layer, a first and second main electrode, a first and second insulating film and a control electrode. The second and third layers are provided periodically on the first layer. The fourth layer is provided on the third layer. The fifth layer is selectively provided on the fourth layer. The first film is provided on sidewalls of a trench that reaches from a surface of the fifth layer to the second layer. The second film is provided closer to a bottom side of the trench than the first film and has a higher permittivity than the first film. The control electrode is embedded in the trench.
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