发明名称 |
Bipolar Junction Transistor Having a Carrier Trapping Layer |
摘要 |
A bipolar junction transistor having a carrier trapping layer, comprises a semi-conductor substrate including a well with a first type ions formed thereon; two impurity regions with a second type ions formed opposite with each other over the well; an insulation layer over the well, and edges extend over the second two impurity regions; and a carrier trapping layer formed over the insulation layer.
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申请公布号 |
US2011260292(A1) |
申请公布日期 |
2011.10.27 |
申请号 |
US20100859025 |
申请日期 |
2010.08.18 |
申请人 |
LIN CHRONG-JUNG;KING YA CHIN;TSAI YI-HUNG |
发明人 |
LIN CHRONG-JUNG;KING YA CHIN;TSAI YI-HUNG |
分类号 |
H01L29/73 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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