| 摘要 |
In certain aspects, a substrate deposition apparatus, including a gas tube coupled to a gas source, an RF power source and a substrate processing chamber, is provided. The gas tube is adapted to carry process gas and cleaning plasma from the gas source/remote plasma gas source to the substrate processing chamber and the RF power source is adapted to couple RF power to the substrate processing chamber. Furthermore an RF choke coupled to the RF power source and the gas source wherein the RF choke is adapted to attenuate a voltage difference between the RF power source and the gas source to prevent plasma formation in the gas tube during substrate processing. Numerous other aspects are provided.
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