| 摘要 |
PROBLEM TO BE SOLVED: To provide a heater, a crystal growing device and a method for producing a compound semiconductor single crystal, by which the production yield and uniformity in a plane of a wafer prepared from an obtained crystal can be improved in the production of a compound semiconductor single crystal such as ZnTe.SOLUTION: The heater 10 includes a cylindrical heat generating unit 101 generating heat by resistive heating, and legs 102 protruding at two opposing positions from each other in a lower part on an outer circumference of the heat generating unit 101, wherein the leg 102 is composed of a terminal 102a where an electrode rod is connected and a connecting part 102b connecting the terminal 102a to the heat generating unit, and the connecting part 102b is formed with the thickness of not more than 10 mm and width of not more than 20 mm. |
