| 摘要 |
A self-repairing memristor (300) and methods of operating a memristor (10), (310) and repairing a memristor (10), (310) employ thermal annealing (110). The thermal annealing (110) removes a short circuit in an oxide layer (12), (312) of the memristor (10), (310). Thermal annealing (110) includes heating the memristor (10), (310) to a predetermined annealing temperature for a predetermined annealing time period. The memristor (10), (310) returns to an electrically open circuit condition after the short circuit is removed.
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