发明名称 MICROTECHNOLOGY PROVEN FOR TRANSFERRING AT LEAST ONE LAYER
摘要 <p>A microtechnology proven for transferring at least one layer comprising steps in which: a first substrate 20 is prepared comprising a porous layer 11 buried under a useful surface at a non-zero distance; a weakened region 13 is formed by ion implantation between this porous layer and this useful surface; the first substrate is bonded to a supporting substrate 30; a mechanical stress is applied to cause separation at the porous layer so as to obtain, on the one hand, a remnant of the first substrate and, on the other hand, a separated layer rigidly connected to the supporting substrate and comprising a bared surface; processing steps are carried out on the bared surface of the separated layer; the separated layer is bonded, by way of the surface to which the processing steps were applied, to a second supporting substrate ; and a heat treatment is applied to cause separation at the weakened region so as to obtain, on the one hand, a remnant of the separated layer which is rigidly connected to the second supporting substrate and, on the other hand, a remnant of this separated layer which is rigidly connected to the first supporting substrate.</p>
申请公布号 WO2011131847(A1) 申请公布日期 2011.10.27
申请号 WO2010FR50767 申请日期 2010.04.21
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES;TAUZIN, AURELIE;STRAGIER, ANNE-SOPHIE 发明人 TAUZIN, AURELIE;STRAGIER, ANNE-SOPHIE
分类号 H01L21/762 主分类号 H01L21/762
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