发明名称 |
SEMICONDUCTOR DEVICE, RFID TAG USING SAME, AND DISPLAY DEVICE |
摘要 |
<p>Disclosed is an oxide semiconductor layer (13) which forms a channel for a thin-film transistor and which includes at least In and oxygen and one or more types of elements from among Zn, Cd, Al, Ga, Si, Sn, Ce, and Ge. A high concentration region (13d) is disposed on one section of the oxide semiconductor layer (13), whereby said region has a maximum In concentration 30 at% or more higher than other regions on the oxide semiconductor layer (13). The film thickness of the oxide semiconductor layer (13) is 100 nm max., and the film thickness of the high concentration region (13d) is 20 nm max. or, preferably, 6 nm max. This enables a thin-film transistor with a sub-threshold coefficient of 100 mV/decade max., a high on-current, and a high field effect mobility to be achieved.</p> |
申请公布号 |
WO2011132769(A1) |
申请公布日期 |
2011.10.27 |
申请号 |
WO2011JP59906 |
申请日期 |
2011.04.22 |
申请人 |
HITACHI, LTD.;WAKANA, HIRONORI;KAWAMURA, TETSUFUMI;UCHIYAMA, HIROYUKI;FUJII, KUNIHARU |
发明人 |
WAKANA, HIRONORI;KAWAMURA, TETSUFUMI;UCHIYAMA, HIROYUKI;FUJII, KUNIHARU |
分类号 |
H01L29/786;G06K19/07;G06K19/077;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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