发明名称 SURFACE ACOUSTIC WAVE DEVICE AND MANUFACTURING METHOD OF SAME
摘要 <p>Disclosed is a surface acoustic wave device upon which an insulating film is formed so as to cover an IDT electrode upon a piezoelectric substrate, wherein the frequency characteristics of the surface acoustic wave device, such as resonance characteristics and filter characteristics, are superior. A surface acoustic wave device (1) is provided with a piezoelectric substrate (10), an IDT electrode (11), an insulating film (16) formed so as to cover the IDT electrode (11) upon the piezoelectric substrate (10), and a frequency adjustment film (17) formed upon the insulating film (16). Upon the surface (16a) of the insulating film (16), a plurality of convex portions (16a1) shaped so as to correspond to the shapes of a plurality of electrode fingers (12a and 13a) are formed. The center position of the convex portions (16a1) formed upon the surface (16a) of the insulating film (16) in a surface acoustic wave propagation direction (D), and the center position of the electrode fingers (12a and 13a) corresponding to the convex portions (16a1) in the surface acoustic wave propagation direction (D), differ in the surface acoustic wave propagation direction (D).</p>
申请公布号 WO2011132443(A1) 申请公布日期 2011.10.27
申请号 WO2011JP51691 申请日期 2011.01.28
申请人 MURATA MANUFACTURING CO., LTD.;TAMAZAKI, DAISUKE;KIKUCHI, TAKU 发明人 TAMAZAKI, DAISUKE;KIKUCHI, TAKU
分类号 H03H9/25;H03H9/145;H03H3/10;H03H9/64 主分类号 H03H9/25
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