| 摘要 |
<p>In the disclosed thin-film transistor substrate, a gate electrode, a gate insulating layer, and an oxide semiconductor layer are formed simultaneously, configuring a laminate; the structure is caused to be such that an SOG film functions as an etching stopper over a channel region when forming a source electrode and a drain electrode; and in the SOG film, the oxide semiconductor layers of adjacent TFTs are segmented within holes for channel isolation formed at locations corresponding to gate wiring between adjacent TFTs that are connected to common gate wiring, the terminal sections of the gate wring are caused to be exposed within holes for terminal exposure formed at locations corresponding to each gate wiring end, and each pixel electrode is formed from the same film as one layer of the drain electrode.</p> |
