A semiconductor structure, comprising: a substrate; a seed layer over an upper surface of the substrate; a semiconductor layer disposed over the seed layer; a transistor device in the semiconductor layer; wherein the substrate has an aperture therein, such aperture extending from a bottom surface of the substrate and terminating on a bottom surface of the seed layer; and an opto-electric structure disposed on the bottom surface of the seed layer.
申请公布号
EP2380251(A1)
申请公布日期
2011.10.26
申请号
EP20100700799
申请日期
2010.01.20
申请人
RAYTHEON COMPANY
发明人
TABATABAIE, KAMAL;LAROCHE, JEFFREY, R.;KAPER, VALERY, S.;BETTENCOURT, JOHN, P.;IP, KELLY, P.